Semiconductor sensors for dosimetry of epithermal neutrons
P. G. Litovchenko1, R. Moss2, F. Stecher-Rasmussen2, K. Appelman2, L. I. Barabash1,
T. I. Kibkalo1, V. F. Lastovetsky1, A. P. Litovchenko1, M. B. Pinkovska1.
1 SC Institute for Nuclear Research of NASU, 47 prospect Nauki, 252028 Kiev, Ukraine
2 ECN, Westerduinweg 3, P. O. Box 1,1755 ZG Petten, The Netherlands
Semiconductor Physics, Quantum Electronics & Optoelectronics. 1999. V. 2, No 2. P.90-91. Eng. Il.: 1. Ref.:4
Abstract. Minimum energy of neutron to displace atoms in silicon crystals are equal to 200 eV. Due to this fact testing our p-i-n diodes under irradiation by the epithermal neutrons was carried out. The more advanced p-i-n diodes on the base of high purity silicon were used at present work, and, as a result, we have obtained considerably more sensitive sensors for more wide range of neutron doses. The sensitivity of sensors is 0.14 V/Gy for average neutron energy of 24 keV.