Semiconductor Physics, Quantum Electronics & Optoelectronics. 2000. V. 3, N 3. P. 271-274.

PACS: 61.78.T, 66.30

Diffusion model of defect formation in silicon under light ion implantation

M.V. Voznyy, P.M. Gorley, V.A. Schenderovskyy*

Yu. Fedkovych Chernivtsi State University, 2, Kotsyubynskyy St., 58012, Chernivtsi, Ukraine
Tel.: (380-372) 598 473, FAX: (380-372) 551 809, E-mail: horley@ite.cv.ua
*Institute of Physics of NASU, 144, Prospect Nauki, 03650, Kyiv, Ukraine
Tel.: (380-44) 650 777, FAX: (380-44) 650 777, E-mail: schender@iop.kiev.ua

Abstract: In the given paper the model of defect formation in silicon under light ion implantation is proposed which describes the whole complex of available experimental results qualitatively, and in a number of cases rather well quantitatively. In contrast to the models existing by now, it takes into account the dissociation processes of complex defects. In the frame of assumption about subsurface vacancy absorption layer existence the expressions for spatial distributions of secondary defect stationary concentrations are obtained using the Lie group theory. Non-stationary complex defect system behavior in silicon is simulated depending on vacancy trap concentration, ion current density and implanted atom energy.

Keywords: ion implantation, silicon, secondary defects, diffusion, complexes' dissociation.

Paper received 24.02.00; revised manuscript received 12.05.00; accepted for publication 16.06.00.

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