Diffusion model of defect formation in silicon under light ion implantation M.V. Voznyy, P.M. Gorley, V.A. Schenderovskyy
Semiconductor physics, quantum electronics and optoelectronics, 3 (3), P. 271-274 (2000).
Comprehensive investigation of defects in highly perfect silicon single crystals I.V. Prokopenko, E.N. Kislovskii, S.I. Olikhovskii, V.M. Tkach, P.M. Lytvyn, T.P. Vladimirova
Semiconductor physics, quantum electronics and optoelectronics, 3 (3), P. 275-281 (2000).
About the nature of diffusion anisotropy in CdS crystals L.V.Borkovskaya, B.R.Dzhumaev, L.Yu. Khomenkova, N.E.Korsunskaya, I.V.Markevich, M.K. Sheinkman
Semiconductor physics, quantum electronics and optoelectronics, 3 (3), P. 282-286 (2000).
Thermoelectric properties of solid solutions based on tin telluride D.M. Freik, M.O. Galushchak, I.M. Ivanishin, V.M. Shperun, R.I. Zapukhlyak, M.V. Pyts
Semiconductor physics, quantum electronics and optoelectronics, 3 (3), P. 287-290 (2000).
Interface model of low temperature plasticity in high uniaxially strained monocrystalline semiconductors Ye.F. Venger, V.V. Kolomoets, V.F. Machulin
Semiconductor physics, quantum electronics and optoelectronics, 3 (3), P. 291-294 (2000).
Hot wall growth and properties of lead telluride films doped by germanium and gallium G.V. Lashkarev, M.V. Radchenko, E.I. Slynko, V.N. Vodopiyanov, V.V. Asotsky, V.M. Kaminsky, G.V. Beketov, E.V. Rengevich
Semiconductor physics, quantum electronics and optoelectronics, 3 (3), P. 295-299 (2000).
Paraelectric properties of PbTe doped with Ga V. Tetyorkin, S. Movchan
Semiconductor physics, quantum electronics and optoelectronics, 3 (3), P. 300-303 (2000).
Acoustodynamic transformation of the defect structure in Hg 1-x Cd x Te alloys Y.M. Olikh, R.K. Savkina, O.I. Vlasenko
Semiconductor physics, quantum electronics and optoelectronics, 3 (3), P. 304-307 (2000).
Physical mechanism for temperature oscillations of ferroelectric ceramics conduction Ya.I. Lepikh
Semiconductor physics, quantum electronics and optoelectronics, 3 (3), P. 308-310 (2000).
Melt instabilities on semiconductor surfaces induced by laser radiation A.Yu. Bonchik, B.J. Dacko, V.I. Demchuk, S.G. Kiyak, I.P. Palyvoda, A.F. Shnyr
Semiconductor physics, quantum electronics and optoelectronics, 3 (3), P. 311-315 (2000).
Polarization operator of phonons in quadratic approximation N.I. Grigorchuk
Semiconductor physics, quantum electronics and optoelectronics, 3 (3), P. 316-321 (2000).
Effect of excitons on photoconversion efficiency in the p + - n - n + - and n + - p - p + -structures based on single-crystalline silicon A.P. Gorban', A.V. Sachenko, V.P. Kostylyov, N.A. Prima
Semiconductor physics, quantum electronics and optoelectronics, 3 (3), P. 322-329 (2000).
Effect of the charge state of traps on the transport current in the SiC/Si heterostructure V.S. Lysenko, I.P. Tyagulski,Y.V. Gomeniuk, I.N. Osiyuk
Semiconductor physics, quantum electronics and optoelectronics, 3 (3), P. 330-337 (2000).
Thermoelastic stresses and defect production in semiconductor-insulator structures at isothermic heating O.A. Agueev and A.M. Svetlichnyi
Semiconductor physics, quantum electronics and optoelectronics, 3 (3), P. 338-342 (2000).
Structural and composition irregularities in GaAs:Si/GaAs films grown by liquid-phase epitaxy V.P. Klad'ko, L.I. Datsenko, Z.V. Maksimenko, O.S. Lytvyn, I.V. Prokopenko, Z. Zytkiewicz
Semiconductor physics, quantum electronics and optoelectronics, 3 (3), P. 343-348 (2000).
Photopleochroism of surface-barrier structures based on semiinsulating cadmium telluride G.A. Ilchuk
Semiconductor physics, quantum electronics and optoelectronics, 3 (3), P. 349-351 (2000).
Contacts for silicon IMPATT and pick-off diodes N.S. Boltovets, N.M. Goncharuk, V.A. Krivutsa, V.E. Chaika, R.V. Konakova, V.V. Milenin, E.A. Soloviev, M.B. Tagaev, D.I. Voitsikhovskyi
Semiconductor physics, quantum electronics and optoelectronics, 3 (3), P. 352-358 (2000).
Microwave diodes with contact metallization systems based on silicides, nitrides and borides of refractory metals N.S. Boltovets, V.V. Basanets, V.N. Ivanov, V.A. Krivutsa, A.V.Tsvir, A.E. Belyaev, R.V. Konakova, V.G. Lyapin, V.V. Milenin, E.A. Soloviev, E.F. Venger, D.I. Voitsikhovskyi, V.V. Kholevchuk, V.F. Mitin
Semiconductor physics, quantum electronics and optoelectronics, 3 (3), P. 359-370 (2000).
Properties and application of the unequal thickness two-component interference systems I.V. Fekeshgazi, V.Yu. Pervak, Yu.A. Pervak
Semiconductor physics, quantum electronics and optoelectronics, 3 (3), P. 371-378 (2000).
Simulation of incoherent radiation absorption in 3C-, 6H- and 4H-SiC at rapid thermal processing O.A. Agueev, A.M. Svetlichny, S.I. Soloviev
Semiconductor physics, quantum electronics and optoelectronics, 3 (3), P. 379-382 (2000).
Optical properties of thin gold films S.A. Kovalenko, R.D. Fedorovych
Semiconductor physics, quantum electronics and optoelectronics, 3 (3), P. 383-388 (2000).
Dispersion of natural modes in a many-layer planar system A.V. Goncharenko, B.A. Snopok, Yu.M. Shirshov, E.F. Venger, S.N. Zavadskii
Semiconductor physics, quantum electronics and optoelectronics, 3 (3), P. 389-393 (2000).
Photoinduced structural changes in As 100-x S x layers A. Stronski, M. Vleek, A. Sklenao
Semiconductor physics, quantum electronics and optoelectronics, 3 (3), P. 394-399 (2000).
Non-ohmic Mott conductivity and thermometric characteristics of heavily doped silicon structures Yu.M. Shwarts, A.V. Kondrachuk, M.M. Shwarts, L.I. Shpinar
Semiconductor physics, quantum electronics and optoelectronics, 3 (3), P. 400-405 (2000).
Simple waveguide model of arbitrary filled plane-plane cavity S. Anokhov
Semiconductor physics, quantum electronics and optoelectronics, 3 (3), P. 406-409 (2000).
Borate single crystals for polyfunctional applications: production and properties B.V. Grinyov, M.F. Dubovik, A.V. Tolmachev
Semiconductor physics, quantum electronics and optoelectronics, 3 (3), P. 410-419 (2000).
Luminescence and radiation-induced defects in Li 2 B 4 O 7 :Eu single crystals M.F. Dubovik, A.V. Tolmachev, B.V. Grinyov, L.A. Grin', E.F. Dolzhenkova, M.V.Dobrotvorskaya
Semiconductor physics, quantum electronics and optoelectronics, 3 (3), P. 420-422 (2000).
EPC sensitization with polymethine dyes: 1. Squarylium dyes of indole row as efficient sensitizers for red region of optical spectrum M.Yu. Bazhenov, P.I. Golod, V.V. Grabovskyy, V.V. Kurdyukov, A.I. Tolmachev, A.Ya. Il'chenko, N.I. Sokolov, G.Zahaykevich
Semiconductor physics, quantum electronics and optoelectronics, 3 (3), P. 423-425 (2000).
