Semiconductor Physics, Quantum Electronics & Optoelectronics. 2000. V. 3, N 3. P. 275-281.

PACS 61.10.Eq; 61.71.Ff, 61.72.Ji, 61.72.Nn, 61.72.Qq

Comprehensive investigation of defects in highly perfect silicon single crystals

I.V. Prokopenko¹,E.N. Kislovskii², S.I. Olikhovskii², V.M. Tkach³, P.M. Lytvyn¹, T.P. Vladimirova²

1Institute of Semiconductor Physics, NAS Ukraine, 45 Prospect Nauky, Kyiv-28, UA-03650, Ukraine
Tel.: (380-44) ; Fax: (380-44) ; E-mail:
2G.V. Kurdyumov Institute of Metal Physics, NAS Ukraine, 36 Blvd. Vernadskogo, Kyiv-142, UA-03680, Ukraine
3Institute of Super-Hard Materials, NAS Ukraine, Kyiv, Ukraine

Abstract. We used X-ray diffraction method of total rocking curves and nondestructive direct observation techniques (atomic force and scanning electron microscopies) to quantitatively determine the defect characteristics (radii and concentrations) for the main types of defects in Czochralski-grown silicon single crystals annealed at 750 °С.

Keywords: X-ray diffraction, structural defects, silicon, scanning electron microscopy, atomic force microscopy.

Paper received 09.06.00; revised manuscript received 04.07.00; accepted for publication 12.07.00.

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