https://doi.org/10.15407/spqeo3.03.287
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2000. V. 3, N 3. P. 287-290.
PACS 73.61.J, 72.20, 85.30, 07.07.0
Thermoelectric properties of solid solutions based on tin telluride
D.M. Freik, M.O. Galushchak, I.M. Ivanishin, V.M. Shperun, R.I. Zapukhlyak, M.V. Pyts
Precarpathian University named by V.Stefanyk
Ivano-Frankivs'k, . Shevchenko str., 57, 76025, Ukraine
E-mail: freik@pu.if.ua
Abstract. The relation of a thermoelectric parameters of the solid solutions based on tin telluride: SnTe-MnTe, SnTe-Cu2Te and SnTe-In2Te3: Pb versus an amount of dopant impurity are investigated. The crystaloquasichemical mechanism of the solid solutions formation are proposed. Showed is that at the expense of essential decreasing of a thermal conductivity factor in the solid solutions the improvement of the basic thermoelectric parameters of the material takes place. The compositions which have a maximum values of the thermoelectric Q-factor are retrieved.
Keywords: tin telluride, solid solutions, thermoelectric parameters, crystaloquasichemical mechanism.
Paper received 22.03.00; revised manuscript received 20.04.00; accepted for publication 06.06.00.
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