Semiconductor Physics, Quantum Electronics & Optoelectronics. 2000. V. 3, N 3. P. 304-307.

PACS: 61.72.V, 42.70.K, 71.28, 61.72.H

Acoustodynamic transformation of the defect structure in Hg_1-xCd_x Te alloys

Y.M. Olikh, R.K. Savkina, O.I. Vlasenko

Institute of Semiconductor Physics NASU, pr. Nauki, 45, Kyiv, 02028
Ph:(044) 265-62-56 Fax:(044) 265 83 42
e-mail: olikh@class.semicond.kiev.ua
e-mail: savkina@class.semicond.kiev.ua

Abstract. The results of the investigations of transport properties of n- and p-Hg_1-xCd_xTe semiconductor crystals exposed to intensive ultrasound (» 6MHz) are represented. Acousto-stimulated phenomena of concentration change (increase in n-type and decrease in p-type) are observed in the region of impurity conductivity. The possible mechanism of the acousto-dynamic processes (electrical activation/disactivation of the crystals defects) are analyzed. For the first time the phenomenon of acoustostimulated p®n conversion have been detected in p-Hg_1-xCd_xTe at T < 120 K.

Keywords: II-VI semiconductors, ultrasound, dislocation, acoustodynamic influence.

Paper received 29.05.00; revised manuscript received 26.06.00; accepted for publication 30.06.00.

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