https://doi.org/10.15407/spqeo3.03.311
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2000. V. 3, N 3. P. 311-315.
PACS: 72.20; 72.40; 73.20; 42.62
Melt instabilities on semiconductor surfaces induced by laser radiation
A.Yu. Bonchik, B.J. Dacko, V.I. Demchuk, S.G. Kiyak, I.P. Palyvoda, A.F. Shnyr
Pidstryhach Institute for Applied Problems of Mechanics and Mathematics,
National Academy of Sciences of Ukraine, 3-b Naukova Str., 79053 Lviv, Ukraine
e-mail: surface@iapmm.lviv.ua
Abstract. Laser modifications of semiconductors are often realized by pulsed rapid melting and subsequent resolidification. Recently melt instabilities have been discovered in locally melted semiconductor surfaces. We determined that spontaneous segregation of uniform temperature stage of crystal lattice and charge carrier concentration can take place in electron-hole plasma, generated by laser radiation. Besides, there exists a positive feedback between the temperature of crystal lattice and charge carrier concentration in the region of their fluctuation. It causes both amplification of original fluctuation of temperature and generation of quasi-periodic temperature fields of large amplitude in semiconductors. The nonuniform temperature fields determine the features of surface relief formation in a zone of laser radiation action.
Keywords: instability, semiconductors, laser, electron-hole plasma, temperature fields.
Paper received 15.06.00; revised manuscript received 10.07.00; accepted for publication 12.07.00.
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