Semiconductor Physics, Quantum Electronics & Optoelectronics, 3 (3), P. 338-342 (2000)
https://doi.org/10.15407/spqeo3.03.338


Semiconductor Physics, Quantum Electronics & Optoelectronics. 2000. V. 3, N 3. P. 338-342.

PACS: 61.72.H, 73.40.Q

Thermoelastic stresses and defect production in semiconductor-insulator structures at isothermic heating

O.A. Agueev and A.M. Svetlichnyi

Taganrog State Radio Engineering University, 44 Nekrasovskii per., GSP-17A, Taganrog, Rostov Region, Russia
Tel.: (863-44) 6-16-11, E-mail: svetlich@tsure.ru

Abstract. For semiconductor structure substrates with film coating disturbances we investigated thermoelastic stresses and their effect on defect production at isothermic heating. A developed mathematical model enables one to optimize the formation and annealing conditions for structures with film coating disturbances during annealing when manufacturing integrated microcircuits.

Keywords: semiconductor substrates, film coatings, isothermic heating, thermoelastic stresses, defect production, dislocations.

Paper received 03.12.99; revised manuscript received 08.05.00; accepted for publication 30.06.00.


Full text in PDF (Portable Document Format) are available for free. [PDF 195K]

Back to Volume 3 N3

Creative Commons License
This work is licensed under a Creative Commons Attribution-NoDerivatives 4.0 International License.