Semiconductor Physics, Quantum Electronics & Optoelectronics. 2000. V. 3, N 3. P. 352-358.

PACS 73.40. Ns, 68.60 Dv

Contacts for silicon IMPATT and pick-off diodes

N.S. Boltovets, N.M. Goncharuk, V.A. Krivutsa, V.E. Chaika

State Scientific & Research Institute “Orion”, 8a Eugene Pottier St., 03057 Kyiv, Ukraine
Tel.: (38044) 456 05 48; E-mail: bms@i.kiev.ua 

R.V. Konakova, V.V. Milenin, E.A. Soloviev, M.B. Tagaev, D.I. Voitsikhovskyi

Institute of Semiconductor Physics, NAS Ukraine, 45 prospect Nauki, 03028 Kyiv, Ukraine
Tel.: (38044) 265 61 82; Fax: (38044) 265 83 42; E-mail: konakova@eee.semicond.kiev.ua

Abstract. We studied experimentally: (i) the ways to fabricate metal-n+-Si ohmic contacts with Schottky barriers; (ii) how elemental, structural and phase composition of barrier layers in the contact system, as well as of the barrier layer-semiconductor interface, depend on the formation techniques and conditions; (iii) their evolution at heating and under 60Co g-radiation. Some versions of technique to form palladium, titanium, gold barrier layers using thermal and magnetron sputtering, as well as thermionic synthesis, are discussed. We investigated the structure, as well as phase and elemental composition, of both the barrier layers in contact system and barrier layer-semiconductor interface as a function of the formation techniques and conditions, and their evolution under heating and 60Co g-radiation. For technological processes of contact system and mesa formation a simulation was performed to determine what contact systems are promising for use in manufacturing technology of silicon IMPATT and pick-off diodes for the millimeter wavelength range. Some conditions have been found that are necessary for production of high-performance contact systems. The heat and radiation tolerance ranges for barrier structures were considered. It was shown that the Si-Ti-TiB₂-Au contact systems are best suited for production of silicon IMPATT and pick-off diode structures intended for the millimeter wavelength range.

Keywords: metal-semiconductor contacts, IMPATT diodes, thermal annealing, simulation

Paper received 27.12.99; revised manuscript received 20.04.00; accepted for publication 06.06.00.

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