https://doi.org/10.15407/spqeo3.03.359
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2000. V. 3, N 3. P. 359-370.
PACS: 07.07.D, 81.05.J, 85.30.K
Microwave diodes with contact metallization systems based on silicides, nitrides and borides of refractory metals
N.S. Boltovets, V.V. Basanets, V.N. Ivanov, V.A. Krivutsa
State Scientific & Research Institute “Orion”, 8a Eugene Pottier St., Kyiv, 03057, Ukraine
Tel.: (380-44) 456-05-48; E-mail: bms@i.kiev.ua
A.E. Belyaev, R.V. Konakova, V.G. Lyapin, V.V. Milenin, E.A. Soloviev, E.F. Venger, D.I. Voitsikhovskyi
Institute of Semiconductor Physics, NAS Ukraine, 45 Prospect Nauki, Kyiv, 03028, Ukraine
Tel.: (380-44) 265-61-82; Fax: (380-44) 265-83-42; E-mail: konakova@eee.semicond.kiev.ua
V.V. Kholevchuk, V.F. Mitin
Microsensor Ltd., Kyiv, Ukraine
Abstract. We investigated the parameters of silicon and gallium arsenide microwave diodes intended for different functions. Their heat-resistant contacts were made on the base of interstitial phases. A unified technological route is proposed to produce microdiodes with bulk contacts. Tests of these silicon and gallium arsenide microwave diodes in forced modes demonstrated their high heat stability.
Keywords: microwave diodes, diode temperature sensors, metallization, silicides, nitrides, borides, refractory metals, reliability.
Paper received 03.05.00; revised manuscript received 22.06.00; accepted for publication 30.06.00.
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