https://doi.org/10.15407/spqeo3.03.379
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2000. V. 3, N 3. P. 379-382.
PACS: 42.25.B, 77.84.B, 78.20.C
Simulation of incoherent radiation absorption in 3C-, 6H- and 4H-SiC at rapid thermal processing
O.A. Agueev, A.M. Svetlichny and S.I. Soloviev
Taganrog State University of Radioengineering, 44 Nekrasovsky nstr., GSP-17A, Taganrog, Rostov-Don Region, Russia
Tel.: (863-44) 6-16-11; E-mail: ageev@tsure.ru
Abstract. For 3C-, 6H- and 4H-SiC polytypes of different conduction types and with various impurity concentrations we investigated absorption of incoherent radiation from the near IR spectral region at rapid thermal annealing. General regularities of both radiation absorption and sample heating are considered. We evaluated various processing modes; one should take this into account when developing technological procedures based on rapid thermal processing for SiC.
Keywords: rapid thermal processing, silicon carbide, incoherent radiation.
Paper received 24.03.00; revised manuscript received 16.05.00; accepted for publication 06.06.00.
Full text in PDF (Portable Document Format) are available for free. [PDF 86K]
This work is licensed under a Creative Commons Attribution-NoDerivatives 4.0 International License.