https://doi.org/10.15407/spqeo3.03.400
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2000. V. 3, N 3. P. 400-405.
PACS: 07.07.D, 07.20.D, 61.72.T, 85.30
Non-ohmic Mott conductivity and thermometric characteristics of heavily doped silicon structures
Yu.M. Shwarts
Institute of Semiconductor Physics, NAS Ukraine, 45 Prospect Nauki, Kyiv, 03028, Ukraine
Tel./Fax: (380-44) 265-56-70; E-mail: shwarts@isp.kiev.ua
A.V. Kondrachuk, M.M. Shwarts, L.I. Shpinar
Institute of Physics, NAS Ukraine, 46 Prospect Nauki, Kyiv, 03028, Ukraine
Tel.: (380-44) 265-72-71, (380-44) 265-08-23
Abstract. We investigated I-V curves and thermometric characteristics of heavily doped p-silicon structures at liquid helium temperatures. The variable-range hopping conductivity is shown to occur in the structures studied. The obtained parameters of non-ohmic Mott conductivity and their temperature and electric field dependencies enabled us to explain the features in structure thermometric characteristics. It is shown that both height and position of the responsivity peak depend on the extent to which the hopping conductivity is non-ohmic. They are essentially determined by the density of states near the Fermi level.
Keywords: non-ohmic Mott conductivity, heavily doped silicon structures, liquid helium temperatures, thermometric characteristics, responsivity.
Paper received 24.02.00; revised manuscript received 04.06.00; accepted for publication 16.06.00.
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