Semiconductor Physics, Quantum Electronics & Optoelectronics, 3 (3), P. 410-419 (2000)
https://doi.org/10.15407/spqeo3.03.410


Semiconductor Physics, Quantum Electronics & Optoelectronics. 2000. V. 3, N 3. P. 410-419.

PACS: 78.40.-q; 78.55.-m, 78.70.En

Borate single crystals for polyfunctional applications: production and properties

B.V. Grinyov, M.F. Dubovik, A.V. Tolmachev

Institute for Single Crystals, NAS Ukraine, 60 prospekt Lenina, Kharkiv, 61001, Ukraine
E-mail: avtol@isc.kharkov.com.

Abstract. Literature data and results of authors' studies are rewieved concerning structure, growing conditions, non-linear optical, piezoelectric and spectral characteristics of borate single crystals Li2B4O7, LiB3O5, b-BaB2O4, LaB3O6, Li6Gd(BO3)3. A high scintillation efficiency of LaB3O6 and Li6Gd(BO3)3:Ce single crystals as well as the high thermostimulated luminescence yield of Li2B4O7: (Ce, Eu, Tm) ones have been demonstrated.

Keywords: single crystal, borates, growing, Czochralski method, structure, absorption, luminescence, activator.

Paper received 26.06.00; revised manuscript received 30.06.00; accepted for publication 12.07.00.


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