Semiconductor Physics, Quantum Electronics & Optoelectronics. 2000. V. 3, N 3. P. 420-422.

PACS: 78.40.-q; 78.55.-m; 78.70.En

Luminescence and radiation-induced defects in Li₂B₄O₇:Eu single crystals

M.F. Dubovik, A.V. Tolmachev, B.V. Grinyov, L.A. Grin', E.F. Dolzhenkova, M.V. Dobrotvorskaya

Institute for Single Crystals, NAS of Ukraine, 60 Lenin Ave., Kharkiv, 61001,Ukraine
Phone: (0572)308 379; fax: (0572) 328 258; E-mail: grin@isc.kharkov.com

Abstract. Thermostimulated luminescence (TSL) of Li₂B₄O₇ and Li₂B₄O₇:Eu single crystals in the temperature range 290-650K has been studied. Lithium tetraborate (LTB) doped with europium has been found to favour a further increase of the light sum storage of electron-captured centres. Radiation-induced defects and their participation in recombination process in LTB:Eu are considered. Suggestions about character of Eu site in the host lattice based on the photoluminescence spectral data are discussed. The electron structure of LTB crystals measured by XPS method is presented.

Keywords: lithium tetraborate, single crystal, photoluminescence, thermostimulated luminescence, radiation-induced defect.

Paper received 24.06.00; revised manuscript received 30.06.00; accepted for publication 12.07.00.

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