https://doi.org/10.15407/spqeo4.03.168
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2001. V. 4, N 3. P. 168-170.
PACS: 71.55.E, 78.55.E
About influences of different actions on spectra of impurity photoluminescence in GaAs
N.M. Litovchenko, A.V. Prokhorovich, O.N. Strilchuk
Institute of Semiconductor Physics of NAS of Ukraine, Nauki av. 45, Kiev 03028, Ukraine,
Phone: 2656373
Abstract. Considered is the possibility to determine changes stimulated by external actions on a ratio between different luminescence center concentrations in GaAs crystals when using their photoluminescence spectra. It was shown that hard data on those changes can be obtained only by a detailed study of lux-brightness characteristics of impurity and inter-impurity bands of luminescence. Correlation changes of luminescence intensities of those bands indicate a variation of radiating centers concentration, if their dependence on excitation level in initial crystals and those subjected to external actions are the same.
Keywords: semi-insulating gallium arsenide, luminescence center, lux-brightness characteristics, concentration of luminescence centers, thermal treatment.
Paper received 08.05.01; revised manuscript received 11.06.01; accepted for publication 13.07.01.
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