https://doi.org/10.15407/spqeo5.03.258
Semiconductor Physics, Quantum
Electronics & Optoelectronics. 2002. V. 5, N 3. P. 258-260.
PACS: 61.66, 61.80
Effect of neutron irradiation and doping level on defect structure formation in gallium arsenide crystals
Institute of Semiconductor Physics, NAS
of Ukraine, 45 prospect Nauky, 03028 Kyiv, Ukraine
Phone: +38(044) 265 5758; fax: +38(044) 265-8342; e-mail: kladko@isp.kiev.ua
Abstract.
Using the technique of diffuse x-ray scattering at the "tails"
of diffraction reflection curves, we analyze the effect of irradiation
of dislocation GaAs crystals with high-energy neutrons on evolution of
radiation clusters as a function of fluence and doping level. The effect
of doping level on size of the above defects is shown to be considerable
at low fluences. We advance a model for disordered regions in an irradiated
crystal based on the results of x-ray experiments.
Keywords: diffuse
scattering, neutron, radiation defect, disordered region, nonstoichiometry
parameter.
Paper received 25.06.02; accepted for publication
10.12.02.
Download full text in PDF [PDF 102K
This work is licensed under a Creative Commons Attribution-NoDerivatives 4.0 International License.