Semiconductor Physics,
  Quantum Electronics & 
     Optoelectronics     SPQEO

Influence of annealing the silicon crystals at 1200°C on the Hall effect and magnetoresistance
P.I. Baranskyy, G.P. Gaydar, P.G. Litovchenko
Semiconductor physics, quantum electronics and optoelectronics, 5 (3), P. 231-234 (2002).
Abstract

Investigation of electron correlation effect on energy spectrum of two-electron systems in crystals with strong electron-phonon coupling
N.I. Kashirina, V.D. Lakhno, V.V. Sychyov
Semiconductor physics, quantum electronics and optoelectronics, 5 (3), P. 235-242 (2002).
Abstract

Total energy, equation of states and bulk modulus of Si and Ge
A.R. Jivani, P.N. Gajjar, A.R. Jani
Semiconductor physics, quantum electronics and optoelectronics, 5 (3), P. 243-246 (2002).
Abstract

The effect of strain on the thermodynamic properties of Ge-Si, Ge-Sn, Si-Sn, Si-C thin solid films
V.G. Deibuk, Yu.G. Korolyuk
Semiconductor physics, quantum electronics and optoelectronics, 5 (3), P. 247-253 (2002).
Abstract

Deep-level defects in CdSe/ZnSe QDs and giant anti-Stokes photoluminescence
M.Ya. Valakh, Yu.G. Sadofyev, N.O. Korsunska, G.N. Semenova, V.V. Strelchuk, L.V. Borkovska, M.V. Vuychik, M.Sharibaev
Semiconductor physics, quantum electronics and optoelectronics, 5 (3), P. 254-257 (2002).
Abstract

Effect of neutron irradiation and doping level on defect structure formation in gallium arsenide crystals
M.S. Seitmuratov, V.P. Klad'ko, O.I. Gudymenko, L.I. Datsenko, I.V. Prokopenko
Semiconductor physics, quantum electronics and optoelectronics, 5 (3), P. 258-260 (2002).
Abstract

The mechanisms of current passage and excitation of electroluminescence in GaSe:Er single crystals
B.G. Tagiyev, R.S. Madatov, F.Sh. Aydayev, T.M. Abbasova
Semiconductor physics, quantum electronics and optoelectronics, 5 (3), P. 261-263 (2002).
Abstract

Photo-enchanced defect reactions in CdS:Ag crystals
L.Yu. Khomenkova, I.V. Markevich
Semiconductor physics, quantum electronics and optoelectronics, 5 (3), P. 264-267 (2002).
Abstract

Dynamics of photoinduced instability in ferroelectric photorefractive crystals caused by space recharging trap waves
A.N. Morozovska, V.V. Obukhovsky, V.V. Lemeshko
Semiconductor physics, quantum electronics and optoelectronics, 5 (3), P. 268-283 (2002).
Abstract

Study of non-reversible photostructural transformations in As40S60-xSex layers applied for fabrication of holographic protective elements
A.V. Stronski, M.Vlcek, S.A. Kostyukevych, V.M. Tomchuk, E.V. Kostyukevych, S.V. Svechnikov, A.A. Kudryavtsev, N.L.Moskalenko, A.A. Koptyukh
Semiconductor physics, quantum electronics and optoelectronics, 5 (3), P. 284-287 (2002).
Abstract

Modeling optical spectra and obtaining information on parameters and features of semiconductor structures
V.А. Vasiljev
Semiconductor physics, quantum electronics and optoelectronics, 5 (3), P. 288-293 (2002).
Abstract

Optical size effects in thin gold films
S.A. Kovalenko, М.P. Lisitsa
Semiconductor physics, quantum electronics and optoelectronics, 5 (3), P. 294-299 (2002).
Abstract

Influence of surface dimensional effects and interband transitions on light absorption in aluminium
L.Yu. Mеlnichenko, B.B. Titarchuk, I.A. Shaykevich
Semiconductor physics, quantum electronics and optoelectronics, 5 (3), P. 300-302 (2002).
Abstract

Electric and photophysical properties of holographic and electroluminescent media based on amorphous molecular semiconductors
A.J. Al-Kadhimi, N.A. Davidenko, N.A. Derevyanko, A.A. Ishchenko, N.G. Kuvshinsky, V.A. Pavlov
Semiconductor physics, quantum electronics and optoelectronics, 5 (3), P. 303-306 (2002).
Abstract

Holographic interferometry as a method to study conformational changes in macromolecules
Y. Barabash, V. Kharkyanen, M. Zabolotny, N. Sokolov
Semiconductor physics, quantum electronics and optoelectronics, 5 (3), P. 307-311 (2002).
Abstract

Many-Body theory of all-optical quantum well logic gates
M.F. Pereira, M. Prado, R. Sampaio
Semiconductor physics, quantum electronics and optoelectronics, 5 (3), P. 312-315 (2002).
Abstract

Characterization of MOS structure using low - k dielectric methylsilsesquioxane with evaporated and sputtered aluminium gate
K.C. Aw, K. Ibrahim
Semiconductor physics, quantum electronics and optoelectronics, 5 (3), P. 316-318 (2002).
Abstract

A free-space alignment technique for active optical waveguide components
A. Karim
Semiconductor physics, quantum electronics and optoelectronics, 5 (3), P. 319-321 (2002).
Abstract

Effect of mechanical stress on operation of diode temperature sensors
V.L. Borblik, E.F. Venger ,Yu.M. Shwarts
Semiconductor physics, quantum electronics and optoelectronics, 5 (3), P. 322-327 (2002).
Abstract

Investigation of the effect of technological parameters on efficiency of chemical string cutting of semiconductor materials
M.Yu. Kravetsky, S.A. Sypko, A.V. Fomin
Semiconductor physics, quantum electronics and optoelectronics, 5 (3), P. 328-331 (2002).
Abstract

Balance model for contactless chemo-mechanical polishing of wafers
N.N. Grigoriev, M.Yu. Kravetsky, G.A. Paschenko, S.A. Sypko, A.V. Fomin
Semiconductor physics, quantum electronics and optoelectronics, 5 (3), P. 332-336 (2002).
Abstract

Growth kinetics of PbS nanocrystals in organo-metallic Langmuir-Blodgett films studied by optical absorption spectroscopy
Yu.N. Savin
Semiconductor physics, quantum electronics and optoelectronics, 5 (3), P. 337-341 (2002).
Abstract