Semiconductor Physics, Quantum Electronics & Optoelectronics, 5 (3), P. 261-263 (2002)
https://doi.org/10.15407/spqeo5.03.261 Semiconductor Physics, Quantum
Electronics & Optoelectronics. 2002. V. 5, N 3. P. 261-263. PACS: 72.80.-r, 78.60.Fi Mechanisms of current passage and excitation of electroluminescence in GaSe:Er monocrystals
Abstract.The
paper deals with electroluminescence investigations in GaSe:Er monocrystals.
It is ascertained that Er3+
centers in GaSe are excited by two ways: a) as a result of non-radiating
recombination of the injected charge carrier in donor-acceptor states
and, b) transfer of evolved energy by means of Coulomb interaction. The
concentration of majority carriers in the current step field (6.26·1011
cm-3) and activation energy
of impurities (0.14 eV) have been determined using data obtained. Keywords: electroluminescence,
monocrystal, intra-central transitions, luminescent centers, excitation Download full text in PDF [PDF 142K This work is licensed under a Creative Commons Attribution-NoDerivatives 4.0 International License. |