Semiconductor Physics, Quantum Electronics & Optoelectronics, 5 (3), P. 261-263 (2002)
https://doi.org/10.15407/spqeo5.03.261


Semiconductor Physics, Quantum Electronics & Optoelectronics. 2002. V. 5, N 3. P. 261-263.

PACS: 72.80.-r, 78.60.Fi

Mechanisms of current passage and excitation of electroluminescence in GaSe:Er monocrystals


B.G. Tagiyev, R.S. Madatov, F.Sh. Aydayev, T.M.Abbasova


Radiation Researches Department of Azerbaijan Academy of Sciences, 31a H.Javid avenue, 370143 Baku, Azerbaijan
Phone: (99412) 398-318; fax: (99412) 398-318; e-mail: ibrahim_gabulov@yahoo.com

Abstract.The paper deals with electroluminescence investigations in GaSe:Er monocrystals. It is ascertained that Er3+ centers in GaSe are excited by two ways: a) as a result of non-radiating recombination of the injected charge carrier in donor-acceptor states and, b) transfer of evolved energy by means of Coulomb interaction. The concentration of majority carriers in the current step field (6.26·1011 cm-3) and activation energy of impurities (0.14 eV) have been determined using data obtained.

Keywords: electroluminescence, monocrystal, intra-central transitions, luminescent centers, excitation
Paper received 14.06.02; accepted for publication 10.12.02.

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