https://doi.org/10.15407/spqeo5.03.264
Semiconductor Physics, Quantum
Electronics & Optoelectronics. 2002. V. 5, N 3. P. 264-267.
PACS: 66.30.Jt, 66.30.Qa,
61.72.Vv, 61.72.Ff, 61.72.Yx
Photo-enchanced defect reactions in CdS:Ag crystals
Institute of Semiconductor Physics, NAS
of Ukraine, 45 prospect Nauky, 03028 Kyiv, Ukraine
Phone: (044) 265 7234; fax: (044) 265 8344; e-mail: khomen@lumin.semicond.kiev.ua
Abstract.
Two reversible photo-enhanced defect reactions proceeding under visible
light illumination have been found in CdS:Ag crystals. The first process
leads to the increase of crystal photosensitivity, which has been shown
to be caused by creation of "sensitizing" recombination centres.
The second process results in photosensitivity degradation that has been
proved to be due to disappearance of shallow donors. The initial state
of the crystal restores under heating in dark. Both reactions have been
shown to vanish after Ag extraction from the crystal. Metastable clusters
including Ag and Cd atoms are supposed to be responsible for these reactions.
Keywords: defects,
photo-enhanced reactions
Paper received 11.05.02; accepted for publication
10.12.02.
Download full text in PDF [PDF 141K
This work is licensed under a Creative Commons Attribution-NoDerivatives 4.0 International License.