https://doi.org/10.15407/spqeo5.03.322
Semiconductor Physics, Quantum
Electronics & Optoelectronics. 2002. V. 5, N 3. P. 322-327.
PACS: 07.07.D
Effect of mechanical stress on operation of diode temperature sensors
V.L. Borblik, Yu.M. Shwarts, E.F. Venger
Institute of Semiconductor Physics, NAS
of Ukraine, 45 prospect Nauki, 03028 Kyiv, Ukraine
Phone: 265-62-92, e-mail: zinovi@lab2.semicond.kiev.ua
Abstract.
Effect of uniaxial elastic strain (of moderate magnitude) on operation
of n+-
p-type diode temperature
sensor made in silicon is considered theoretically. It is assumed that
operating current and stress direction coincide with each other and with
one of three main crystallographic directions [100], [110] and [111].
The cases of long and short diodes, compressive and tensile stresses are
studied. It is shown that, under such conditions, two components of the
piezojunction effect (namely: change in the minority carrier mobility
and change in the intrinsic carrier concentration) act oppositely to each
other. As a result, effect of longitudinal parasitic mechanical stress
on indications of the silicon diode temperature sensors proves to be minimal
in the direction of [100]-type [111]-type as it would be expected from
rather than piezoresistivity of n-Si.
Keywords:
diode temperature sensor, mechanical stress, piezojunction effect, silicon.
Paper received 10.04.02; accepted for publication
10.12.02.
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