https://doi.org/10.15407/spqeo5.03.328
Semiconductor Physics, Quantum
Electronics & Optoelectronics. 2002. V. 5, N 3. P. 328-331.
PACS: 89.20
Investigation of the effect of technological parameters on efficiency of chemical string cutting of semiconductor materials
Institute of Semiconductor Physics, NAS
of Ukraine, 45 prospect Nauky, 03028 Kyiv, Ukraine
Phone: 380 (44) 265-6189; fax: 380 (44) 265-4110; e-mail: avl@mizar.semicond.kiev.ua
Abstract.
On the basis of the balance model for convection-diffusion processes that
occur during string chemical cutting (CC) of samples, we derive an analytical
expression for the limiting CC rate at maximal use of etching agent. Comparison
between the experimental and theoretical dependencies of CC rates for
InSb, HgCdTe and CdTe samples on the velocity of string motion and diameter
of sample being cut demonstrates good agreement of the experimental results
with the model notions. It is shown that diffusion kinetics of the CC
process is retained even at very high velocities of string motion. The
experimentally obtained value of CC rate is approaching 3 mm/min. The
dependencies studied point at resources for increase of CC efficiency.
Some technical modification of the equipment, related primarily to increasing
velocity of motion of the etching liquid carrier, will make the CC technique
able to meet competition with the abrasion techniques in technological
lines for manufacturing of semiconductor devices.
Keywords: chemical
cutting, string chemical cutting, string.
Paper received 21.06.02; accepted for publication
10.12.02.
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