Semiconductor Physics, Quantum Electronics and Optoelectronics, 5 (3) P. 231-234 (2002).
References
1. R. Smith, Semiconductors, Moscow, "Mir", 1982, 558 p. (in Russian)
2. K.Zeeger, Physics of semiconductors, Moscow, "Mir", 1977,616 p. (in Russian)
3. P.I. Baranskyy, I.S. Buda, I.V. Dakhovskyi, V.V. Kolomoyets, Electrical and galvanomagnetic phenomena in anisotropic semiconductors, Kiev, "Naukova dumka", 1977, 270 p. (in Russian)
4. A.S. Davydov, Theory of solid state, Moscow, "Nauka",1976, 670 p. (in Russian)
5. Yu.P. Yemets, Boundary problems in electrodynamics of anisotropically conducting media, Kiev, "Naukova Dumka",1987, 255 p. (in Russian)
6. C. Herring, Effect of random inhomogeneities on electrical and galvanomagnetical measurements // J.Appl.Phys.31(11),p. 1939-1953 (1960). https://doi.org/10.1063/1.1735477
7. P.I. Baranskyy, V.M. Babich, Yu.P. Dotsenko, V.P. Shapovalov, Effect of growth layers and statistically distributed inhomogeneities on magnetoresistance of n-Si // Fizika i tekhnika poluprovodnikov, 13(6), p. 1216-1219 (1979), (in Russian)
8. P.I. Baranskyy, V.V. Savyak, L.A. Shcherbina, Investigation of phonon-phonon relaxation in neutron-doped and usual silicon crystals // Fizika i tekhnika poluprovodnikov, 14(2), p.302-305 (1980), (in Russian).
9. P.I. Baranskyy, V.V. Savyak, V.P. Shapovalov, Influence of annealing and cooling conditions on electrophysical properties of n-Si with phosphorus impurity // Fizika i tekhnika poluprovodnikov, 15(8), p. 1531-1534 (1981), (in Russian)
10. P.I. Baranskyy, V.V. Savyak, Yu.V. Simonenko, Effect of heat treatment conditions on the drag piezothermoelectromotive force in transmutationally doped and undoped silicon crystals // Fizika i tekhnika poluprovodnikov, 19(9), p. 1712-1715(1985), (in Russian).
11. H. Bender, Investigation of oxigen-related lattice defects in Czochralski silicon by means of electron microscopy techniques // Phys. Stat. Sol.(a). 86(1), p. 245-261 (1984). https://doi.org/10.1002/pssa.2210860126
12. W. Bergholz, W. Schröter, Oxygen related defects, especially thermal donors in silicon. In: Proc. of the 7-th Internat. School "Defects in crystals" ed. by E. Mizera (world Scientific, Szczyrk, Poland, 1985), p. 196-207.
13. V.M. Babich, N.I. Bletskan, E.F. Venger, Oxygen in Si single crystals, Kyiv, "Interpress Ltd", 1997, 240 p. (in Russian).
14. V.M. Babich, M.P. Baran, V.L. Kyrytsya et al. Scattering of current carriers in annealed Czochralski-grown silicon crystals // Ukrainskii fizicheskii zhurnal, 39(4), p. 481-485 (1994),(in Ukranian)
15. V.M. Babich, M.P. Baran, Yu.P. Dotsenko et al. Creation and destruction of thermodonors - 2 in silicon crystals with high carbon content // Izvestiya AN SSSR, ser. Neorganicheskiye materialy, 24(2), p. 193-197 (1988), (in Russian).