https://doi.org/10.15407/spqeo6.03.278
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2003. V. 6, N 3. P. 278-281.
PACS: 72.80.Ey
Injection currents in lamellar
crystals of gallium telluride
R.S. Madatov, T.B. Tagiyev, I.A. Gabulov,
T.M. Abbasova
Azerbaijan National Academy of Sciences, Institute of Radiation Problems,
31a H.Javid avenue, Baku-143, Azerbaijan
Phone: +38(99412) 39 8318; fax: +38(99412) 39 8318
Abstract. The results of researches of electrical properties and injection currents
in lamellar samples of p-type gallium telluride with the purpose of determination
of charge transfer mechanism both in the Ohm law regime and in the range
of its violation in the wide temperature interval (77- 300) K have been
given. Specific resistance of the studied samples changed within 5·104
6·105 Ohm·cm
at room temperatures. The analysis based on the Lampert theory has shown
that the current-voltage characteristics at 77 K are in accord with monopolar
injection current and one discrete level in the gallium telluride bandgap
with the energy 0.18 eV and concentration
5.6·1012
cm-3.
It has been found that, in the temperature range of 77- 300 K in GaTe
single crystals, the mechanism of charge transfer can be ascertained with
currents limited by the spatial charge.
Keywords: injection currents, lamellar crystals, electrical properties, charge transfer
mechanism, temperature range, conductivity, current-voltage characteristics,
bandgap.
Paper received 27.05.03; accepted for publication
17.06.03.
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