Semiconductor Physics, Quantum Electronics & Optoelectronics. 2003. V. 6, N 3. P. 287-293.

PACS: 63.22.+m, 72.10.Di, 78.30.-j

Resonance Raman scattering by intersubband plasmon-phonon excitations in InAs/AlSb structures
M.Ya. Valakh1, V.V. Strelchuk1, O.F. Kolomys1, H.L. Hartnagel2, J. Sigmund2

1 Institute of Semiconductior Physics, NAS of Ukraine, 03028 Kyiv, Ukraine
2 Institut fur Hochfrequenztechnik, Fchberreich Electrotechnik und Informationstechnik, TU Darmstadt, Merckstr. 25, 64237 Darmstadt, Germany

Abstract. Intersubband plasmon-phonon excitations in InAs/AlSb with InSb- and AlAs-like interfaces were studied using the Raman scattering method. It was found that InSb interface is characterized by a decreasing concentration and increasing mobility of 2D electrons in InAs quantum wells. In the case of AlAs interface at the heterojunction quantum well - barrier, the formation of AlSb1-xAsx solid solution takes place. Revealed are considerable concentration changes for 2D electrons at low temperatures in dependency on the excitation quantum energy.

Keywords: heterostructure, plasmon-phonon excitations, resonance Raman scattering.
Paper received 16.05.03; accepted for publication 17.06.03.

Download full text in PDF  [PDF 647K]

References

Back to Volume 6 N3

This work is licensed under a Creative Commons Attribution-NoDerivatives 4.0 International License.