Semiconductor Physics, Quantum Electronics & Optoelectronics. 2003. V. 6, N 3. P. 299-302.

PACS: 78.55.Et; 78.67.Hc; 71.55.Gs

Mechanism of photoinduced luminescence degradation in CdSXSe1-X quantum dots
V.P. Kunets, N.R. Kulish, M.P. Lisitsa, V.P. Bryksa

V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 45 prospect Nauky, 03028 Kyiv, Ukraine
Phone: +38(044) 265 6282; e-mail: vl_kunets@yahoo.com

Abstract. A possible mechanism of the photoinduced luminescence degradation in the hexagonal CdSXSe1-X quantum dots synthesized in a glass matrix is discussed using luminescence decay kinetic investigations and ab initio calculations of chemical bond energies at the boundary between CdSe cluster and SiOX fragment. The mechanism implies that the photoinduced break of Se-O bonds increases the electric field inside a quantum dot, which stimulates diffusion of the cadmium vacancy to the surface. This mechanism enables to explain the luminescence photodarkening effect in quantum dots as well as the degradation of the nonlinear optical device parameters.

Keywords: quantum dots, photodarkening effect, photoluminescence.
Paper received 01.06.03; accepted for publication 17.06.03.

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