Semiconductor Physics, Quantum Electronics & Optoelectronics. 2003. V. 6, N 3. P. 303-306.

PACS: 78.47.+p, 78.55.A, 78.67.Bf

Regularities of visible photoluminescence creation in low-dimensional silicon structures
E.G. Manoilov

V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 45 prospect Nauky, 03028 Kyiv, Ukraine
Phone: +38(044) 265 6230; e-mail: dept_5@isp.kiev.ua

Abstract. The evolution of time-resolved photoluminescence (PL) spectra in Au-doped nanocrystalline silicon films produced by laser ablation has been studied. The PL spectra with a relaxation time of nanoseconds are broad; they lie in the energy range 1.4-3.2 eV with a peak at 2.4-2.8 eV. At the longest times of tens of microseconds, the spectra become narrower, with a peak at 1.6 eV. At intermediate times, two bands are observed: low-energy (1.6 eV) and high-energy, with the peak shifting from 2.7 to 2.1 eV with time increasing. The data are discussed in terms of quantum confinement, dielectric amplification, and manifestation of kinetically coupled electron-hole and exciton subsystems. Ions and atoms of gold passivate dangling bonds at Si surface and serve as catalysts for oxidation of nanocrystals.

Keywords: nanocrystalline silicon, time-resolved photoluminescence, quantum confinement, dielectric amplification, metal doping.
Paper received 27.05.03; accepted for publication 17.06.03.

Download full text in PDF  [PDF 410K]

References

Back to Volume 6 N3

This work is licensed under a Creative Commons Attribution-NoDerivatives 4.0 International License.