Semiconductor Physics, Quantum Electronics & Optoelectronics. 2003. V. 6, N 3. P. 319-323.

PACS: 78.20.C

The features of phonon component of linear dichroism in uniaxially strained silicon crystals
B.K. Serdega, E.F. Venger, I.E. Matyash

V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 45 prospect Nauky, 03650 Kyiv, Ukraine
E-mail: serdega@isp.kiev.ua

Abstract. Linear dichroism induced by uniaxial compression strain in semiconductor silicon samples was studied with modulation spectroscopy technique using modulation of electromagnetic radiation polarization. We obtained a spectral characteristic of the difference between transmissions for polarizations parallel to the different axes of the optical indicatrix of the sample studied in the edge absorption region. A fine structure of characteristics was found in which one can observe event of acoustic phonons in the interband transitions. From the results of measurements of the total and difference transmission characteristics we calculated spectral dependence of linear dichroism. It has singularities related to the indirect interband transitions.

Keywords: polarization, anisotropy, dichroism, modulation, silicon, phonon.
Paper received 28.12.02; revised manuscript received 12.06.03; accepted for publication 17.06.03.

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