Semiconductor Physics, Quantum Electronics & Optoelectronics. 2003. V. 6, N 3. P. 382-385.

PACS: 05.40.-a, 02.50.-r, 05.20.-y, 82.40.Bj

Noise-induced escape flux on time-scales preceding quasistationarity
S.M. Soskin, V.I. Sheka, T.L. Linnik

V.E. Lashkaryov Institute of Semiconductor Physics, 45 pr. Nauky, 03028 Kyiv, Ukraine
Phone: +38 (044) 265 6175; fax: +38 (044) 265 8342; e-mail: slava@soskin.semicond.kiev.ua

Abstract. Noise-induced escape from the metastable part of potential is considered on time scales preceding the formation of quasiequilibrium within that part of the potential. It is shown that, counterintuitively, the escape flux may depend exponentially strongly, and in a complicated manner, on time and friction.

Keywords: noise-induced escape flux; most probable escape path.
Paper received 26.05.03; accepted for publication 17.06.03.

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