Semiconductor Physics, Quantum Electronics & Optoelectronics. 2003. V. 6, N 3. P. 392-396.

PACS: 68.65.Cd

Investigation of superlattice structure parameters using quasi-forbidden reflections
V.P. Kladko1, L.I. Datsenko1, A.A. Korchovyi1, V.F. Machulin1, P.M. Lytvyn1, A.V. Shalimov2, A.V. Kuchuk1, P.P. Kogutyuk1

1 V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 45 prospect Nauky, 03028 Kyiv, Ukraine
E-mail: kladko@isp.kiev.ua
2 Institute of Physics PAN, 32/36 al. Lotnikow, 02-609 Warsaw, Poland

Abstract. We studied possibilities of a nondestructive X-ray technique for testing short-period strained GaAs-AlAs superlattices. An analysis of the quasi-forbidden 200 reflections may be used for determination of superlattice layer structure parameters and sublayer thickness. The effect of irregularity of superlattice transition region on X-ray diffraction reflection curves and elastic strains in layers was studied.

Keywords: X-ray structural analysis, superlattices, quasi-forbidden reflections.
Paper received 09.06.03; accepted for publication 17.06.03.

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