Semiconductor Physics, Quantum Electronics and Optoelectronics, 6 (3) P. 274-277 (2003).


References

1. A.A.Lipnic. Bounding and dissociation of Motts excitons on phonons and impurity centres // Fiz. tverd. tela, 3(8), pp.2322-2330 (1961) (in Russian).
2. D.Magde, H.Mahr, Kinetics of excitons in CdS at low temperature // Phys.Rev.B., 2(10), pp.4098-4103 (1970)
https://doi.org/10.1103/PhysRevB.2.4098
3. V.L.Broude, I.I.Tartakovsky, V.B.Timofeev, Kinetics of luminescence of free and bound excitons in CdS crystals // Fiz.tverdogo tela, 14(12), pp.3531-3539 (1972) (in Russian).
4. K.D.Glinchuk, A.V.Prokhorovich, Pecularities of determination of the shallow-level impurity concentrations in semiconductors from the analysis of the exciton luminescence spectrum // Fiz.Tekhnika Poluprov, 36(5), pp.519-524 (2002)(in Russian).
https://doi.org/10.1134/1.1478536
5. K.D.Glinchuk, A.V.Prokhorovich, Analysis of the nearband-edge luminescence of semiconductors containing isolated and bound shallow acceptora and donors // Semiconductor Physics, Quantum electronics and Optoelectronics, 5(4),pp.353-361 (2002).
https://doi.org/10.15407/spqeo5.04.353
6. G.W.Hooft, W.A.Poel, L.W.Molenkamp, C.T.Foxon, Giant oscillator strength of free excitons in GaAs // Phys.Rev.B.,35(15), pp.8281-8284 (1987).
https://doi.org/10.1103/PhysRevB.35.8281
7. A.P.Levanyuk, V.V.Osipov, Edge luminescence of the direct-gap semiconductors // Uspekhi fiz.nauk., 133(3),pp.427-477 (1981) (in Russian).
https://doi.org/10.3367/UFNr.0133.198103b.0427
8. K.D.Glinchuk, Y.I.Guroshev, A.V.Prokhorovich, Use of photo- and cathodoluminescence for studying of the physical properties of semi - insulating undoped GaAs crystals (areview) // Optoelectronics and Semiconductor technique., 24,pp.66-96 (1992) (in Russian).
9. K.Brierly, D.S.Lehr, Full wafer-mapping of total and ionized EL2 concentration in semi-insulating GaAs using infrared absorption // Appl.Phys.Lett., 55(23), pp.2426 - 2428 (1989).
https://doi.org/10.1063/1.102015
10. M.Suemitsu, K.Terada, M.Nishiima, N.Miyamoto, Mechanism for homogenizing electrical properties of semiinsulating GaAs during annealing // J.Appl.Phys., 70(5),pp.2594-2598 (1991).
https://doi.org/10.1063/1.349368