https://doi.org/10.15407/spqeo6.03.274
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2003. V. 6, N 3. P. 274-277.
PACS: 71.55. E; 78.55. E
Capture coefficients of
free excitons by shallow acceptors and donors in gallium arsenide
K.D. Glinchuk, N.M. Litovchenko, O.N. Strilchuk
Lashkaryov Institute of Semiconductor Physics,
NAS of Ukraine, 45 prospect Nauky, 03028 Kyiv, Ukraine
Phone : +38(044) 265 6373; fax: +38(044) 2653337; e-mail: strilchuk@isp.kiev.ua
Abstract. An analysis of the 4.2 K exciton luminescence spectra of semi-insulating GaAs crystals with different concentrations of shallow acceptors (Ñ) and donors (Si) is given. As a result, the 4.2 K capture coefficients of free excitons by shallow neutral acceptors [bA0X = (4 ± 2) 10-8 cm3/s] and donors [bD0X= (1.5 ± 0.8) 10-7 cm3/s] are found and also an estimate of the capture coefficient of free excitons by ionized shallow donors was made [ bD+X>>bD0X ].
Keywords: gallium arsenide, shallow acceptors and donors, exciton luminescence,
capture coefficients of free excitons.
Paper received 09.06.03; accepted for publication
16.06.03.
Download full text in PDF
[PDF
110K]
This work is licensed under a Creative Commons Attribution-NoDerivatives 4.0 International License.