Semiconductor Physics, Quantum Electronics and Optoelectronics, 6 (3) P. 311-315 (2003).

References

1.VLSI Electronics: Microstructure Science, Eds. N.G.Einspruch,W.R. Wisseman, Vol.11(GaAs Microelectronics), AcademicPress, Orlando-San Diego-New York-London-Toronto-Montreal-Sydney-Tokyo (1985).
2. M. Shur, GaAs Devices and Circuits, Plenum Press, New York and London (1987).
https://doi.org/10.1007/978-1-4899-1989-2
3.GaAs FET Principles and Technology, Eds. J.D. DiLorenzo,D.D. Khandelwal, Artech House, Inc. (1984).
4. E.F. Venger, R.V. Konakova, G.S. Korotchenkov,V.V.Milenin, E.V. Russu, I.V. Prokopenko, Interactions between Phases and Degradation Mechanisms in Metal-InP and Metal-GaAs Structures // Information-Editing Dept. of the Institute of Semiconductor Physics of the National Academy of Sciences of Ukraine, Kiev (1999) (in Russian).
5. V.I. Strikha, E.V. Buzaneva, Physical Foundations of the Metal-Semiconductor Contact Reliability in Integrated Electronics // Radio i Svyaz', Moscow (1987) (in Russian).
6. V.N. Ivanov, R.V. Konakova, V.V. Milenin, M.A. Stovpovoi, Contact-forming films of titanium borides and nitrides in gallium-arsenide microwave devices // Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, No 6, pp. 54-56 (2002) (in Russian).
7. V.N. Chelyubeev, Effect of contact nonuniformities on the electrical characteristics of Gunn diodes // Synopsis of the Candidate of Technical Sci. Thesis, Kiev, Kiev Polytechnic Institute, 2002 (in Russian).