Semiconductor Physics, Quantum Electronics & Optoelectronics. 2003. V. 6, N 3. P. 311-315.

PACS: 85.30.Fg

Heat-resistant ohmic and barrier contacts for GaAs-based microwave devices
V.N. Ivanov1, R.V. Konakova2, V.V. Milenin2, M.A. Stovpovoi1

1State Scientific & Research Institute "Orion", 8a Eugene Pottier St., 03057 Kyiv, Ukraine
2V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 45 prospect Nauky, 03028 Kyiv, Ukraine
Phone: +38(044) 265 6182; fax: +38(044) 265 8342; e-mail: konakova@isp.kiev.ua

Abstract. We studied barrier and ohmic contacts that are used when developing GaAs-based microwave devices. It is shown that Au-Mo-TiBx-n-GaAs barrier contacts have higher thermal stability than Au-Ti-n-GaAs ones. This is due to substantial slowdown of grain-boundary diffusion in Au-Mo-TiBx contacts resulting from use of amorphous TiBx layers as barrier material. A phase transition in them occurs at a temperature over 1000 °С. It was determined that use of TiBx as an antidiffusion layer in Au-TiBx-AuGe-n-GaAs ohmic contacts to Gunn diodes increases their service life as compared to the traditional Au-AuGe-n-GaAs ohmic contact.

Keywords: gallium arsenide, ohmic contact, barrier contact, antidiffusion layer, mass transport.
Paper received 08.06.03; accepted for publication 17.06.03.

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