PACS: 42.65; 42.70; 61.70

Solid solutions of CdxHg1–xTe:V:Mn, CdxHg1–xTe:Ti:Mn (x = 0.9 – 0.95): growth and properties
S.Yu. Paranchych, Yu.V. Tanasyuk, V.R. Romanyuk, O.S. Romanyuk, V.M. Makogonenko, M.D. Andriychuk, S.V. Synylo, Yu.I. Ivonyak

Yuriy Fedkovych Chernivtsi National University, 2 Kotsyubynskyi str., 58012 Chernivtsi, Ukraine
Phone: +380 (372)584753, fax: + 380 (372) 552914, E-mail: parsu@chnu.cv.ua

Abstract. Single crystals of CdxHg1–xTe:V:Mn, CdxHg1–xTe:V: Mn (x = 0.9–0.95) with different concentrations of vanadium, titanium and manganese have been obtained via the modified Bridgman method and their optical, photoelectrical and galvano-magnetic properties have been studied. According to the performed investigations, the grown crystals proved to be satisfactorily homogeneous and highly sensitive within technically important spectral range of 1–1.5 mm. Energy position of vanadium and titanium level in the material under investigation determined from R(T) dependence is of about 0.73–0.82 eV; 0.65–0.72 eV, respectively.

Keywords: semiconductors, crystal growth, 3d-impurities in semiconductor, galvanomagnetic effects.
Paper received 26.05.04; accepted for publication 21.10.04.

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