https://doi.org/10.15407/spqeo7.03.236
PACS: 42.65; 42.70; 61.70
Mathematic modeling the oxygen distribution mechanism in Si ingots during growing processes
A.P. Oksanich, S.E. Pritchin, A.V. Vasheruk
Institute of Economics and Advanced Technologies, 24/37 , Proletarska street, 36900, Kremenchuk, Ukraine
Phone/fax.: +380 (5366) 31124, E-mail oksanich@cat-ua.com
Abstract. The article provides specified mathematic modeling of oxygen distribution mechanism in Si ingots. Experimentally such model parameters as quartz melting speed for different melting zones, initial oxygen concentration in melt, influence of crucible rotation speed on melting rate. The work outlines the results of computer modeling. The results of theoretical and experimental investigations carried make possible to predict oxygen concentration in Si ingot and define the technology parameters for growing ingots of stated concentration.
Keywords: Si ingots, oxygen, crucible, mathematic modeling.
Paper received: 27.08.04; accepted for publication: 21.10.04.
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