https://doi.org/10.15407/spqeo7.03.240
PACS: 73.20; 78.66
Radiation-stimulated relaxation
of internal mechanical straines
in homoepitaxial GaP films
P.A. Gentsar, A.A. Kudryavtsev
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 45, prospect Nauki, 03028 Kyiv, Ukraine
E-mail: journal@isp.kiev.ua
Abstract. The electroreflectance method based on the electrolyte technique is used for investigation of electron transitions E0, E0 + D0 in homoepitaxial films n-GaP (111) with the electron concentration 5.7?1023 m–3 before and after irradiation by 60Co gamma quanta in the dose range 105 – 106 rad under the room temperature. The authors observed splitting the low-energy extremum after irradiation. The decrease in internal mechanical strains inside the films as a result of gamma irradiation was estimated via changes of the electron transition energy and collision parameter of widening. Also estimated is the time of charge carrier energy relaxation after irradiation.
Keywords: electroreflectance, gallium phosphide, homoepitaxial film.
Paper received 23.03.04; accepted for publication 21.10.04.
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