PACS: 61.43.Fs, 78.30.-j, 78.30.g

Raman spectra and electron microscopic investigations of the sections of modified As2S3 glasses
N. Mateleshko, V. Mitsa, E. Borkach

Uzhgorod National University, 32, Voloshin str., 88000 Uzhgorod, Ukraine
E-mail: mitsa@univ.uzhgorod.ua

Abstract. Chalcogenide vitreous semiconductors (ChVS) are used as memory elements, elements of fiber, integral and power optics [1–6]. The change of the synthesis conditions results in the change of structure and, as a consequence, physical parameters of ChVS [1]. It means that it is possible to find solution of the fabrication of glasses with high optical strength by using modification of ChVS structure [2]. The objective of the present work is to investigate the influence of the temperature-temporal conditions of the fabrication on the structure of As2S3 glasses by the method of the Raman scattering spectroscopy and electron microscopy and also to choose the conditions of fabrication of As2S3 glasses with the continuously bonded matrix of the structure suitable for power optics using this basis.

Keywords: chalcogenide glasses, arsenicum trisulfide, Raman scattering spectroscopy.
Paper received 03.03.04; accepted for publication 21.10.04.

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