PACS: 73.40.Cg

Effect of pulse thermal treatments on the Ni(Ti)–n-21R(6H)-SiC contact parameters
S.P. Avdeev1, O.A. Agueev1, R.V. Konakova2, Ya.Ya. Kudryk2, O.S. Lytvyn2, P.M. Lytvyn2, V.V. Milenin2, D.A. Sechenov1, A.M. Svetlichny1, S.I. Soloviev3, T.S. Sudarshan3

1Taganrog State Radio Engineering University, 44, Nekrasovskii per., GSP-17A, 347928 Taganrog, Rostov Region, Russia
E-mail: ageev@tsure.ru
2V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 45, prospect Nauky, 03028 Kyiv, Ukraine
Phone: +380 (44) 265 61 82; fax: +380 (44) 265 83 42; E-mail: konakova@isp.kiev.ua
3Department of Electrical Engineering University of South Carolina, 29208 South Carolina, USA
Phone: +803 777 8577; fax: 208-988-9071; E-mail: soloviev@engr.sc.edu

Abstract. We present experimental investigations of the effect of rapid thermal treatment with incoherent IR radiation, as well as electric-spark and electron-beam treatments, on the electric parameters of Ni(Ti) n-21R(6H)-SiC contacts. The results obtained show that pulse thermal treatment is an efficient technique for local change of parameters of heterogeneous metal/silicon carbide structures.

Keywords: Ni(Ti) n-21R(6H)-SiC contacts, Schottky barrier, rapid thermal treatment, electric-spark treatment, electron-beam treatment, atomic force microscopy, secondary ion mass spectroscopy.
Paper received 17.06.04; accepted for publication 21.10.04.

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