Semiconductor Physics, Quantum Electronics & Optoelectronics, 7 (3), P. 291-296 (2004)
https://doi.org/10.15407/spqeo7.03.291


PACS: 77.55.+f, 78.66.-w

Optical properties of dielectric layers with CeO2
T.V. Semikina

Department of Environmental & Material Engineering, Teikyo University of Science & Technology,
2525 Yatsusawa, Uenohara-machi, Kitatsuru-gun, Yamanashi-pref., 409-0193 Japan,
E-mail: semikina@edd.ntu-kpi.kiev.ua, tanyasemikina@rambler.ru

Abstract. The polycrystalline thin films CeO2, WO3, amorphous complex films WO3 + CeO2 with content of CeO2 in the powder 10, 15 and 20 %, and CeO2 + Dy2O3 with content of Dy2O3 in the powder 10, 15 and 20 % are obtained by vacuum deposition method via powder evaporation. For the first time the optical characteristics of complex films WO3 + CeO2 and CeO2+Dy2O3 are obtained. As a results of films investigation by ellipsometry the dependencies of refraction and extinction coefficients on incident beam energy are presented. The dielectric permittivity and energy band gapes are calculated. The refraction coefficients of films CeO2 are 1.85–2.85 and are not more than 2.37 for complex films. Dielectric constant e of complex films are 3.57–4.16, and e =4.7 of CeO2 film. The CeO2, WO3, and WO3 + CeO2 films have wide band gape Eg = 2.8–3.37 eV.

Keywords: oxide high-k materials, rare-earth elements, CeO2, optical characteristics, dielectric permittivity, and wide band gap.
Paper received 22.05.04; accepted for publication 21.10.04.

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