Semiconductor Physics, Quantum Electronics & Optoelectronics, 7 (3), P. 297-300 (2004)
https://doi.org/10.15407/spqeo7.03.297


PACS: 68.55.Jk, 29.40.Mc

Structural dependence of CsI(Tl) film scintillation properties
A. Ananenko, A. Fedorov, A. Lebedinsky, P. Mateychenko, V. Tarasov, Yu. Vidaj

Institute for Scintillation Materials, NAS of Ukraine, 60, Lenin str., 61001 Kharkov, Ukraine
Phone: +380 (572) 30 79 58 ; fax: +380 (572) 32 10 82; E-mail: fedorov@xray.isc.kharkov.com

Abstract. Scintillating CsI(Tl) films were obtained by vacuum deposition on single crystalline LiF substrates and non-orienting glass substrates. Their structure and morphology were examined by X-ray diffraction and scanning electron microscopy. Scintillation properties of films dependent on their structure are discussed.

Keywords: scintillator, vacuum deposition, structure, pulse height spectra.
Paper received 07.06.04; accepted for publication 21.10.04.

Download full text in PDF  [PDF 510K

Back to Volume 7 N3

Creative Commons License
This work is licensed under a Creative Commons Attribution-NoDerivatives 4.0 International License.