Semiconductor Physics, Quantum Electronics & Optoelectronics. 2005. V. 8, N 3. P. 012-015.
https://doi.org/10.15407/spqeo8.03.012


Anisotropy and non-linearity of absorption of intensive IR light by free electrons in germanium
V.M. Vasetskii, V.A. Ignatenko, V.N. Poroshin

Institute of Physics, NAS of Ukraine, 46, prospect Nauky, 03028 Kyiv, Ukraine Fax: (38 044) 525-15-89, e-mail: poroshin@iop.kiev.ua

Abstract. The anisotropy and non-linearity of absorption of the intensive CO2 laser radiation by free electrons in germanium has been found. The effect is caused by redistribution of electrons among equivalent valleys occurring due to non-equal heating electrons in the valleys which have different orientation in regard to the electric field of the light wave.

Keywords: multivalley semiconductors, light absorption by free carriers, anisotropy, non-linearity, heating carriers, intervalley redistribution.

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