Semiconductor Physics, Quantum Electronics and Optoelectronics (SPQEO)

Journal cover page

Semiconductor Physics,
  Quantum Electronics & 
     Optoelectronics
     SPQEO

 ISSN 1605-6582 (On-line)  |  ISSN 1560-8034 (Print)
 DOI: https://doi.org/10.15407/spqeo



Semiconductor Physics, Quantum Electronics and Optoelectronics (SPQEO) is open access, free download peer-reviewed journal licensed under a Creative Commons Attribution-NoDerivatives 4.0 International License

Current Issue
Vol 21 N2 (2018)



Volume 21 (2018) Volume 20 (2017) Volume 19 (2016) Volume 18 (2015) Volume 17 (2014) Volume 16 (2013) Volume 15 (2012) Volume 14 (2011) Volume 13 (2010) Volume 12 (2009) Volume 11 (2008) Volume 10 (2007) Volume 09 (2006) Volume 08 (2005) Volume 07 (2004) Volume 06 (2003) Volume 05 (2002) Volume 04 (2001) Volume 03 (2000) Volume 02 (1999) Volume 01 (1998)


 

Contents Volume 8 N 3

Physico-Chemical model and computer simulations of silicon nanowire growth
A. Efremov, A. Klimovskaya, T. Kamins, B. Shanina, K . Grygoryev, S . Lukyanets
Semiconductor physics, quantum electronics and optoelectronics. 2005. V.8, N.3. P. 001-011.
Abstract | Full text (PDF)

Anisotropy and non-linearity of absorption of an intensive IR light by free electrons in germanium
V.M. Vasetskii, V.A. Ignatenko, V.N. Poroshin
Semiconductor physics, quantum electronics and optoelectronics. 2005. V.8, N.3. P. 012-015.
Abstract | Full text (PDF)

Spectroscopy of the solid solutions (Si2)1-x(ZnS)x
B. Sapaev, A.S. Saidov, Sapaev I.B., Yu.Yu. Bacherikov, R.V. Konakova, O.B. Okhrimenko, I.N. Dmitruk, N.P. Galak
Semiconductor physics, quantum electronics and optoelectronics. 2005. V.8, N.3. P. 016-018.
Abstract | Full text (PDF)

Morphology and optical properties of α-Si:Y films, obtained by electron-beam evaporation method
T.V. Semikina
Semiconductor physics, quantum electronics and optoelectronics. 2005. V.8, N.3. P. 019-024.
Abstract | Full text (PDF)

Character of elastic energy absorption in well developed genetic-impurity defect structure in monocrystalline silicon
B.I. Gutsulyak, A.V. Oliynych-Lysyuk, I.M. Fodchuk
Semiconductor physics, quantum electronics and optoelectronics. 2005. V.8, N.3. P. 025-029.
Abstract | Full text (PDF)

Polaron effects in exchange clusters (V2+ - F- - V2+ in KMgF3)
N.I. Kashirina
Semiconductor physics, quantum electronics and optoelectronics. 2005. V.8, N.3. P. 030-038.
Abstract | Full text (PDF)

Analysis of luminescence method for determination of Cd1-xZnxTe composition
K.D. Glinchuk, N.M. Litovchenko, A.V. Prokhorovich, O.N. Strilchuk
Semiconductor physics, quantum electronics and optoelectronics. 2005. V.8, N.3. P. 039-044.
Abstract | Full text (PDF)

Dielectric relaxation in Se80Ge20 and Se75Ge20Ag5 chalcogenide glasses
A. Dwivedi, R. Arora, N. Mehta, N. Choudhary, A. Kumar
Semiconductor physics, quantum electronics and optoelectronics. 2005. V.8, N.3. P. 045-049.
Abstract | Full text (PDF)

Influence of low-temperature annealing on the state of CdTe surface
O.A. Parfenyuk, M.I. Ilashchuk, S.M. Chupyra, V.R. Burachek, D.V. Korbutyak, S.G. Krylyuk, N.D. Vakhnyak
Semiconductor physics, quantum electronics and optoelectronics. 2005. V.8, N.3. P. 050-053.
Abstract | Full text (PDF)

Photovoltaic and optical properties of a polymer - PbS nanocomposite
P. Lutsyk, L. Dzura, A. Kutsenko, Ya. Vertsimakha, J. Sworakowski
Semiconductor physics, quantum electronics and optoelectronics. 2005. V.8, N.3. P. 054-059.
Abstract | Full text (PDF)

Multifunctional devices based on induced polar states
V.F. Kosorotov, L.V. Shchedrina, L.V. Levash
Semiconductor physics, quantum electronics and optoelectronics. 2005. V.8, N.3. P. 060-065.
Abstract | Full text (PDF)

Light absorption by inhomogeneous semiconductor film
L. Baraban, V. Lozovski
Semiconductor physics, quantum electronics and optoelectronics. 2005. V.8, N.3. P. 066-073.
Abstract | Full text (PDF)

Characteristics of optical limiting in media with nonlinear absorption and scattering
S.E. Zelensky, O.S. Kolesnik, O.V. Kopyshinsky
Semiconductor physics, quantum electronics and optoelectronics. 2005. V.8, N.3. P. 074-079.
Abstract | Full text (PDF)

Broadband interference filters with suppression of high reflection bands of 4-, 5- and 6-th orders
V.Yu. Pervak, L.V. Poperenko
Semiconductor physics, quantum electronics and optoelectronics. 2005. V.8, N.3. P. 080-084.
Abstract | Full text (PDF)

Technology of manufacturing the reliable silicon photoconverters with long operation time
N.A. Guseynov, Sh.Q. Askerov, Sh.S. Aslanov, M.N. Agaev, M.H. Gasanov
Semiconductor physics, quantum electronics and optoelectronics. 2005. V.8, N.3. P. 085-087.
Abstract | Full text (PDF)

Analysis of radiation patterns of rectangular microstrip antennas with uniform substrate
A. Boualleg, N. Merabtine, M. Benslama
Semiconductor physics, quantum electronics and optoelectronics. 2005. V.8, N.3. P. 088-091.
Abstract | Full text (PDF)

Photoelectric properties of modified C60 films. Maxwell-Vagner type polarization between near-electrode and bulk layers
A.V. Koval'chuk, A.F. Shevchuk, D.A. Naiko, T.N. Koval'chuk
Semiconductor physics, quantum electronics and optoelectronics. 2005. V.8, N.3. P. 092-099.
Abstract | Full text (PDF)

A priori probabilistic model for the reliability of an "organised structure"
E.A. Sal'kov, G.S. Svechnikov
Semiconductor physics, quantum electronics and optoelectronics. 2005. V.8, N.3. P. 100-105.
Abstract | Full text (PDF)