Semiconductor Physics,
  Quantum Electronics & 
     Optoelectronics     SPQEO

Physico-Chemical model and computer simulations of silicon nanowire growth
A. Efremov, A. Klimovskaya, T. Kamins, B. Shanina, K . Grygoryev, S . Lukyanets
Semiconductor physics, quantum electronics and optoelectronics. 2005. V.8, N.3. P. 001-011.
Abstract | Full text (PDF)

Anisotropy and non-linearity of absorption of an intensive IR light by free electrons in germanium
V.M. Vasetskii, V.A. Ignatenko, V.N. Poroshin
Semiconductor physics, quantum electronics and optoelectronics. 2005. V.8, N.3. P. 012-015.
Abstract | Full text (PDF)

Spectroscopy of the solid solutions (Si₂)_1-x(ZnS)_x
B. Sapaev, A.S. Saidov, Sapaev I.B., Yu.Yu. Bacherikov, R.V. Konakova, O.B. Okhrimenko, I.N. Dmitruk, N.P. Galak
Semiconductor physics, quantum electronics and optoelectronics. 2005. V.8, N.3. P. 016-018.
Abstract | Full text (PDF)

Morphology and optical properties of α-Si:Y films, obtained by electron-beam evaporation method
T.V. Semikina
Semiconductor physics, quantum electronics and optoelectronics. 2005. V.8, N.3. P. 019-024.
Abstract | Full text (PDF)

Character of elastic energy absorption in well developed genetic-impurity defect structure in monocrystalline silicon
B.I. Gutsulyak, A.V. Oliynych-Lysyuk, I.M. Fodchuk
Semiconductor physics, quantum electronics and optoelectronics. 2005. V.8, N.3. P. 025-029.
Abstract | Full text (PDF)

Polaron effects in exchange clusters (V²⁺ - F^- - V²⁺ in KMgF₃)
N.I. Kashirina
Semiconductor physics, quantum electronics and optoelectronics. 2005. V.8, N.3. P. 030-038.
Abstract | Full text (PDF)

Analysis of luminescence method for determination of Cd_1-xZn_xTe composition
K.D. Glinchuk, N.M. Litovchenko, A.V. Prokhorovich, O.N. Strilchuk
Semiconductor physics, quantum electronics and optoelectronics. 2005. V.8, N.3. P. 039-044.
Abstract | Full text (PDF)

Dielectric relaxation in Se₈₀Ge₂₀ and Se₇₅Ge₂₀Ag₅ chalcogenide glasses
A. Dwivedi, R. Arora, N. Mehta, N. Choudhary, A. Kumar
Semiconductor physics, quantum electronics and optoelectronics. 2005. V.8, N.3. P. 045-049.
Abstract | Full text (PDF)

Influence of low-temperature annealing on the state of CdTe surface
O.A. Parfenyuk, M.I. Ilashchuk, S.M. Chupyra, V.R. Burachek, D.V. Korbutyak, S.G. Krylyuk, N.D. Vakhnyak
Semiconductor physics, quantum electronics and optoelectronics. 2005. V.8, N.3. P. 050-053.
Abstract | Full text (PDF)

Photovoltaic and optical properties of a polymer - PbS nanocomposite
P. Lutsyk, L. Dzura, A. Kutsenko, Ya. Vertsimakha, J. Sworakowski
Semiconductor physics, quantum electronics and optoelectronics. 2005. V.8, N.3. P. 054-059.
Abstract | Full text (PDF)

Multifunctional devices based on induced polar states
V.F. Kosorotov, L.V. Shchedrina, L.V. Levash
Semiconductor physics, quantum electronics and optoelectronics. 2005. V.8, N.3. P. 060-065.
Abstract | Full text (PDF)

Light absorption by inhomogeneous semiconductor film
L. Baraban, V. Lozovski
Semiconductor physics, quantum electronics and optoelectronics. 2005. V.8, N.3. P. 066-073.
Abstract | Full text (PDF)

Characteristics of optical limiting in media with nonlinear absorption and scattering
S.E. Zelensky, O.S. Kolesnik, O.V. Kopyshinsky
Semiconductor physics, quantum electronics and optoelectronics. 2005. V.8, N.3. P. 074-079.
Abstract | Full text (PDF)

Broadband interference filters with suppression of high reflection bands of 4-, 5- and 6-th orders
V.Yu. Pervak, L.V. Poperenko
Semiconductor physics, quantum electronics and optoelectronics. 2005. V.8, N.3. P. 080-084.
Abstract | Full text (PDF)

Technology of manufacturing the reliable silicon photoconverters with long operation time
N.A. Guseynov, Sh.Q. Askerov, Sh.S. Aslanov, M.N. Agaev, M.H. Gasanov
Semiconductor physics, quantum electronics and optoelectronics. 2005. V.8, N.3. P. 085-087.
Abstract | Full text (PDF)

Analysis of radiation patterns of rectangular microstrip antennas with uniform substrate
A. Boualleg, N. Merabtine, M. Benslama
Semiconductor physics, quantum electronics and optoelectronics. 2005. V.8, N.3. P. 088-091.
Abstract | Full text (PDF)

Photoelectric properties of modified C₆₀ films. Maxwell-Vagner type polarization between near-electrode and bulk layers
A.V. Koval'chuk, A.F. Shevchuk, D.A. Naiko, T.N. Koval'chuk
Semiconductor physics, quantum electronics and optoelectronics. 2005. V.8, N.3. P. 092-099.
Abstract | Full text (PDF)

A priori probabilistic model for the reliability of an "organised structure"
E.A. Sal'kov, G.S. Svechnikov
Semiconductor physics, quantum electronics and optoelectronics. 2005. V.8, N.3. P. 100-105.
Abstract | Full text (PDF)

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