Semiconductor Physics, Quantum Electronics & Optoelectronics. 2005. V. 8, N 3. P. 016-018.
https://doi.org/10.15407/spqeo8.03.016

Spectroscopy of (Si2)1-x(ZnS)x solid solutions
B. Sapaev1, A.S. Saidov1, I.B. Sapaev1, Yu.Yu. Bacherikov2, R.V. Konakova2, O.B. Okhrimenko2, I.N. Dmitruk3, N.P. Galak3

1Physical-Technical Institute of the Scientific Association "Physics-Sun", Academy of Sciences of Republic of Uzbekistan, Tashkent
2V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41, prospect Nauky, 03028 Kyiv, Ukraine; e-mail: olga@isp.kiev.ua
3Taras Shevchenko Kyiv National University, Physics Department, 2, prospect Academician Glushkov, 03022 Kyiv, Ukraine

Abstract. Presented are the investigation of (Si2)1-x(ZnS)x solid solutions. Morphological, electrical, and optical properties of the solutions are investigated. Chemical components of the solid solutions are homogeneously distributed along the thickness of the layer. The photoluminescence spectra of (Si2)1-x(ZnS)x consist of a wide band with the peak within the range of 505 to 520 nm. The Raman scattering shows that approximately 19 % of silicon located directly under the epitaxial film is in amorphous phase.

Keywords: solid solutions, photoluminescence, photoluminescence excitation spectra, Raman scattering.

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