Semiconductor Physics, Quantum Electronics and Optoelectronics, 8 (3) P. 025-029 (2005).

References

1. M.G. Milvidsky, Semiconductor materials in presentday electrical engineering. Nauka, Moscow (1986).
2. K. Reivi, Defects and impurities in semiconductor silicon. Mir, Мoscow (1984).
3. V.S. Vavilov, Effect of irradiation on semiconductors. Mir, Мoscow (1988).
4. V.S. Vavilov, V.F. Kiselev, B.N. Mukashev, Defects in silicon and on its surface. Nauka, Мoscow (1990).
5. V.M. Babich, N.I. Bletskan, E.F. Venger, Oxygen in silicon monocrystals. Interpress LTD, Kyiv (1997).
6. I.E. Talanin, Formation mechanism and properties of growth-induced microdefects in dislocation-free silicon monocrystals. Dr. Sc. Thesis. Chernivtsi (2005).
7. L.N. Aleksandrov, M.I. Zotov, Internal friction and defects in semiconductors. Nauka, Novosibirsk (1972).
8. N.P. Kulish, P.A. Maksimyuk, .A. Mel'nikova, A.P. Onanko, A.M. Strutynsky. Effect of X-ray radiation on internal friction in silicon // Fizika Tverdogo Tela 40, N 7, p. 1257-1258 (1998) (in Russian).
https://doi.org/10.1134/1.1130506
9. S.I. Tan et al. // Ion implantation in semiconductors, other mater. Plenum Press, New-York (1973) p. 19.
10. S.F. Levitan, A.V. Prikhod'ko, Yu.V. Sokolov. Low-temperature formation of Si IV phase at silicon surface indentation // Ukr. Fiz. Zhurn. 35, N 10, p. 1537-1541(1990) (in Russian).
11. A.V. Oleynich-Lysyuk, B.I. Gutsulyak, Oscillation character of the internal friction time dependences in non-equilibrium systems // Proc. XXI Intern. Conf."Relaxation Phenomena in Solids" (RPS-21), 2-7 October 2004. Voronezh, Russia (2004) (in Russian).
12. B.I. Gutsulyak, A.V. Oleynich-Lysyuk, I.M. Fodchuk, On the nature of temperature hysteresis of effective shear modulus in silicon monocrystal // Fiz. i Tekhn. Poluprov. 39, N 7, p. 769-771 (2005) (in Russian).
https://doi.org/10.1134/1.1992624
13. V.M. Chernov, V.L. Inderbom, Overcoming of point defects by elastic field dislocation as the mechanism of internal friction / Internal Friction in Metal Materials. Nauka, Moscow (1970) p. 26-32.
14. S.A. Antipov, I.L. Baranov, A.I. Drozhzhin, I.V. Mishin, A.M. Roschupkin, On the mechanism of low-temperature peaks of internal friction in Si whiskers // Fizika Tverdogo Tela 31, N 9, p. 163-169 (1989) (in Russian).
15. T.G. Gutsulyak, O.G. Gimchynsky, V.T. Maslyuk, A.V. Oleynich-Lysyuk, I.M. Fodchuk, Structural changes in silicon crystals after high-energy electron and gamma-irradiation // Scientific Bulletin of Chernivtsi National University.Issue 157: Physics. Electronics. Chernivtsi National University Publ., Chernivtsi, p. 153-156 (2003) (in Ukrainian).
16. V.S. Postnikov,Internal friction in metals. Metallurgiya, Moscow (1974).
17. T. Figielski, Dislocations in semiconductor materials and devices // Acta physica Hungarica 56, N 1-4, p. 119-130 (1984).
18. N.D. Raransky, I.M. Fodchuk, O.G. Gimchynsky et al. X-ray diffraction investigations of structural changes in Si monocrystals irradiated by high-energy electrons // Neorganich. Materialy 33, N 2, p. 33 (1997) (in Russian).
19. O.G. Gimchinsky, T.G. Gutsulyak, A.V. Oleynich-Lysyuk, et al. Evolution of defective structure of the irradiated silicon during natural ageing // Semiconductor Physics, Quantum Electronics and Optoelectronics 6, N 3-4, p. 43-49 (2003).