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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2005. V. 8, N 3. P. 025-029.
Low-temperature hysteresis of dynamic shear modulus Geff in silicon
Yu. Fed’kovych Chernivtsi National University, 2, Kotsyubinsky str., 58012 Chernivtsi, Ukraine
Abstract. Low-frequency internal friction and dynamic shear modulus (Geff) in Si
monocrystal were investigated in the range of 20 to 200 ºC. Temperature hysteresis of
internal friction was found and effective shear modulus was studied in the unirradiated
and a series of irradiated silicon samples. The appearance of a hysteresis loop is due to
interaction of genetic microdefects with crystal point defects and their nonsymmetric
distribution in the process of samples heating-cooling.
Keywords: silicon, shear modulus, hysteresis.
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