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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2005. V. 8, N 3. P. 039-044.
Analysis of luminescence method for determination
of Cd1-xZnxTe composition
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41, prospect Nauky, 03028 Kyiv, Ukraine
Phone: +38(044)5256373; fax: +38(044)5253337;
E-mail: strilchuk@isp.kiev.ua
Abstract. A detailed analysis of the method for determination of Cd1-xZnxTe
composition x from measurements of 4.2 K peak position of the emission band induced
by annihilation of excitons bound with neutral shallow acceptors is given. Found are the
conditions fulfillment of which permits to obtain reliable x values by the above
luminescence method.
Keywords: Cd1–xZnxTe composition, excitons, exciton-impurity complexes,
luminescence.
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