Semiconductor Physics, Quantum Electronics and Optoelectronics, 8 (3) P. 050-053 (2005).

References

1. D.V. Korbutyak, S.V. Melnychuk, E.V. Korbut, and M.M. Borysyuk, Cadmium telluride: defect-impurity states and detector properties, Ivan Fedorov, Kyiv (2000).
2. T.L. Chu and Si.S. Chu, Surface passivation and oxidation of cadmium telluride and properties of metal-oxide-CdTe structures // J. Appl. Phys. 58(8), p. 3206-3210 (1985).
https://doi.org/10.1063/1.335830
3. M. Suita and T. Taguchi, Thermal oxidation of CdTe surface and the properties of MDS-diodes // Nucl. Instrum. Meth. A 283, p. 268-273 (1989).
https://doi.org/10.1016/0168-9002(89)91370-3
4. G.A. Il'chuk, V.I. Ivanov-Omskii, V.Yu. Rud', Yu.V. Rud', R.N. Bekimbetov, and N.A. Ukrainetz, Preparation and photoelectrical properties of oxide CdTe structures // Fiz. Tekhn. Poluprov. 34(9), p. 1099-1102 (2000).
https://doi.org/10.1134/1.1309422
5. J. Garcia-Garcia, J. Gonzales-Hernandes, J.G. Mendoza-Alvarez, Photoluminescence characterization of the surface layer of chemically etched CdTe // J. Appl. Phys. 67(8), p. 3810-3814 (1990).
https://doi.org/10.1063/1.346055
6. G.Ya. Pikus and G.Ye. Chaika, Role of electronic processes in vaporization mechanism and in formation of the composition of binary semiconductor compound with ionic bonding // Ukr. Fiz. Zhurn. 18(6), p. 931-939 (1973).
7. G.N. Tal'nova and G.Ya. Pikus, Electronic processes and kinetics of vaporization of ionic crystals in vacuum // Zhurn. Fiz. Khim. L11(12), p. 3107-3112 (1978).
8. T.B. Fedorova, A.V. Vishnyakov, and P.V. Kovtunenko, Composition of the products and kinetics of low-temperature oxidation of CdTe // Izv. AN SSSR: Neorg. Mater. 23(6), p. 912-916 (1987).
9. V.B. Matulskii, B.V. Pavlyk, A.V. Savitskii, and N.A. Tzal', Investigation of gas emission at annealing of irradiated cadmium telluride single crystals // Fiz. Elektronika 35, p. 63-67 (1987).
10. V.B. Matulskii, B.V. Pavlyk, A.V. Savitskii, and V.R. Burachek, Influence of dislocation structure on emission of Cd from CdTe // Elektr. Tekhn.: Materialy 239(2), p. 71-72 (1989).
11. T. Yoshikawa, K. Yokota, S. Tamura, S. Katayama, I. Kimura, S. Ishihara, Decomposition of bare and covered cadmium telluride during annealing // Ann. Rep. Res. Reactor Inst. Kyoto Univ. 15, p.123-128 (1982).
12. N.D. Vakhnyak, S.G. Krylyuk, S.Yu. Paranchych, and M.D. Raranskii, Influence of active external treatments on impurity-defect states in CdTe:Cl // Bulletin of Chernivtsi National University: Physics and Electronics 133, p. 86-94 (2002).
13. O.A. Parfenyuk, A.V. Savitskii, P.A. Pavlin, and A.L. Al'bota, Compensating effect of Sn dopant in cadmium telluride // Izv. AN SSSR: FizikaN 4, p. 66-69 (1986).
https://doi.org/10.1007/BF00893004
14. J. Franc, M. Fiederle, V. Babentsov, A. Fauler, K.W. Benz, and R. James, Defect structure of Sn-doped CdTe // J. Electron. Mater. 32(7) p. 772-778 (2003).
https://doi.org/10.1007/s11664-003-0069-3
15. Physics and Chemistry of II - VI Compounds, ed. by S.A. Medvedev, Mir, Moscow (1970).
16. H.-Y. Shin and C.-Y. Sun, Photoluminescence spectra of Cl-doped CdTe crystals // J. Crystal Growth 186, p. 354-361 (1998).
https://doi.org/10.1016/S0022-0248(97)00539-3
17. S.H. Song, J.F. Wang, and M. Isshiki, Cd-vacancy-related excitonic emission in CdTe // Ibid. 257, p. 231-236 (2003).
https://doi.org/10.1016/S0022-0248(03)01457-X