Semiconductor Physics, Quantum Electronics & Optoelectronics. 2005. V. 8, N 3. P. 050-053.
https://doi.org/10.15407/spqeo8.03.050

Influence of low-temperature annealing on the state of CdTe surface
O.A. Parfenyuk1, M.I. Ilashchuk1, S.M. Chupyra1, V.R. Burachek1,D.V. Korbutyak2, S.G. Krylyuk2, N.D. Vakhnyak2

Yu. Fed’kovych Chernivtsi National University, 2, Kotsyubinsky str., 58012 Chernivtsi, Ukraine 2 V. Lashkaryov Institute of Semiconductors Physics, NAS of Ukraine, 41, prospect Nauky, 03028, Kyiv, Ukraine Phone/fax: +(380 44) 5256391, e-mail: div47@isp.kiev.ua

Abstract. Influence of low-temperature annealing on electrical and luminescent properties of semi-insulating n-CdTe:Sn is studied. It is shown that annealing at T ≥ 453 K modifies a near-surface layer of the crystals and this enhances the hole component of the conductivity. It is explained by Cd evaporation and subsequent enrichment of the near-surface layer with cadmium vacancies. Results of electrical measurements are confirmed by our low-temperature photoluminescence experiments.

Keywords: cadmium telluride, annealing, photoluminescence, surface, vacancy.

Full Text (PDF)

Back to N3 Volume 8