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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2005. V. 8, N 3. P. 066-073.
Light absorption by an inhomogeneous semiconductor film
1Taras Shevchenko Kyiv National University, Radiophysics Department,
2/5, prospect Academician Glushkov, 03022 Kyiv, Ukraine, e-mail: laryssy@univ.kiev.ua
Abstract. Processes of light absorption by thin semiconductor film in the framework of
local-field method are studied. The film is inhomogeneously implanted with O+
ions. A
distribution of implanted layer is characterized by different profiles. The effective
susceptibility (response to the external field) and dissipative function of inhomogeneous
in thickness semiconductor film were calculated. The absorption spectra are numerically
calculated as a function of the frequency and angle of incidence. It was obtain that light
absorption spectra are strongly dependent on profile distributions of implanted impurities
along the film thickness.
Keywords: thin film, local field, effective susceptibility, absorption, semiconductor,
implanted ion.
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