Semiconductor Physics, Quantum Electronics & Optoelectronics. 2006. V. 9, N 3. P. 017-021.
https://doi.org/10.15407/spqeo9.03.017

Investigation on the bandgap of semiconductor solid solution Hg1−x−y−zCdxMnyZnzTe
V.V. Zhikharevich, S.E. Ostapov, V.G. Deibuk

Chernivtsi National University, 2, Kotsyubinsky str., 58012 Chernivtsi, Ukraine

Abstract. The paper presents a investigation on the bandgap of a new narrow-gap semiconductor solid solution Hg1−x−y−zCdxMnyZnzTe via optical measurements. Modeling of the edge of fundamental absorption for Hg1−x−y−zCdxMnyZnzTe is performed and specifying values of the bandgap at room temperature in crystals under study are determined.

Keywords: bandgap, band structure, solid solutions.

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